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parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 13 i c @ t c = 100c continuous collector current 6.5 i cm pulsed collector current ? 52 a i lm clamped inductive load current ? 52 i f @ t c = 100c diode continuous forward current 7.0 i fm diode maximum forward current 52 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 60 w p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) c IRG4BC20UD-S insulated gate bipolar transistor with ultrafast soft recovery diode features features features features features e g c v ces = 600v v ce(on) typ. = 1.85v @v ge = 15v, i c = 6.5a ultrafast copack igbt 1/12/01 ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200khz in resonant mode ? generation 4 igbt design provides tighter para- meter distribution and higher efficiency than generation 3 ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard d 2 pak package benefits ? generation 4 igbts offers highest efficiencies available ? optimized for specific application conditions ? hexfred diodes optimized for performance with igbts . minimized recovery characteristics require less/no snubbing ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbts pd- 94077 n-channel parameter typ. max. units r q jc junction-to-case CCC 2.1 r q cs case-to-sink, flat, greased surface 0.5 CCC c/w r q ja junction-to-ambient, typical socket mount CCC 40 wt weight 1.44 CCC g (oz) thermal resistance www.irf.com 1 absolute maximum ratings d 2 pak
IRG4BC20UD-S 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 27 41 i c = 6.5a qge gate - emitter charge (turn-on) CCC 4.5 6.8 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) CCC 10 16 v ge = 15v t d(on) turn-on delay time CCC 39 CCC t j = 25c t r rise time CCC 15 CCC ns i c = 6.5a, v cc = 480v t d(off) turn-off delay time CCC 93 140 v ge = 15v, r g = 50 w t f fall time CCC 110 170 energy losses include "tail" and e on turn-on switching loss CCC 0.16 CCC diode reverse recovery. e off turn-off switching loss CCC 0.13 CCC mj see fig. 9, 10, 11, 18 e ts total switching loss CCC 0.29 0.3 t d(on) turn-on delay time CCC 38 CCC t j = 150c, see fig. 9, 10, 11, 18 t r rise time CCC 17 CCC ns i c = 6.5a, v cc = 480v t d(off) turn-off delay time CCC 100 CCC v ge = 15v, r g = 50 w t f fall time CCC 220 CCC energy losses include "tail" and e ts total switching loss CCC 0.49 CCC mj diode reverse recovery. l e internal emitter inductance CCC 7.5 CCC nh measured 5mm from package c ies input capacitance CCC 530 CCC v ge = 0v c oes output capacitance CCC 39 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 7.4 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 37 55 ns t j = 25c see fig. CCC 55 90 t j = 125c 14 i f = 8.0a i rr diode peak reverse recovery current CCC 3.5 5.0 a t j = 25c see fig. CCC 4.5 8.0 t j = 125c 15 v r = 200v q rr diode reverse recovery charge CCC 65 138 nc t j = 25c see fig. CCC 124 360 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery CCC 240 CCC a/s t j = 25c see fig. during t b CCC 210 CCC t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 CCC CCC v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.69 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage CCC 1.85 2.1 i c = 6.5a v ge = 15v CCC 2.27 CCC v i c = 13a see fig. 2, 5 CCC 1.87 CCC i c = 6.5a, t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -11 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 1.4 4.3 CCC s v ce = 100v, i c = 6.5a i ces zero gate voltage collector current CCC CCC 250 a v ge = 0v, v ce = 600v CCC CCC 1700 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.4 1.7 v i c = 8.0a see fig. 13 CCC 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4BC20UD-S www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0 2 4 6 8 10 12 0.1 1 10 100 f, fre q uenc y ( khz ) load current (a) a 60% of rated voltage duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 13w 0.1 1 10 100 4 6 8 10 12 c i , collector-to-em itter current (a) ge t = 25c t = 150c j j v , gate-to-emitter volta g e (v) a v = 10v 5s pulse w idth cc 0.1 1 10 100 0.1 1 1 0 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e (v) t = 150c t = 25c j j a v = 15v 20s pulse width ge
IRG4BC20UD-S 4 www.irf.com fig. 4 - maximum collector current vs. case temperature fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 1.0 1.4 1.8 2.2 2.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse w idth ge a t , junction temperature ( c ) j i = 6.5a i = 13a i = 3.3 a c c c 0 2 4 6 8 10 12 14 25 50 75 100 125 150 m aximum d c collector current (a) t , case temperature (c) c v = 15v ge 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin gle p u ls e (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. d uty factor d = t / t 2. p eak t = p x z + t 12 j dm thjc c fig. 5 - typical collector-to-emitter voltage vs. junction temperature
IRG4BC20UD-S www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 200 400 600 800 1000 1 10 100 ce c, capacitance (pf) v , collector-to-em itter voltage (v) a v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c re s c oes 0 4 8 12 16 20 0 5 10 15 20 25 30 ge v , g ate-to-em itter voltage (v ) g q , t otal g ate c ha rg e (n c ) a v = 400v i = 6 .5a ce c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a t , junction temperature ( c ) j i = 13a i = 6.5a i = 3.3a r = 50 w v = 15v v = 480v c c c g ge cc 0.29 0.30 0.31 0.32 0 102030405060 g total switching losses (mj) a v = 480v v = 15v t = 25c i = 6.5a r , gate resistance ( w ) cc ge j c
IRG4BC20UD-S 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 10 12 14 c total switching losses (mj) i , collector-to-emitter current ( a ) a r = 50 w t = 150c v = 480v v = 15v g j cc ge 0.1 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j
IRG4BC20UD-S www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 100 200 300 400 500 100 1000 f di /dt - ( a/ s ) rr q - (nc) i = 16a i = 8 .0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - ( a/ s ) di(rec)m/dt - (a/s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - ( a/ s ) i - (a) irrm i = 1 6a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 0 20 40 60 80 100 100 1000 f di /dt - ( a/ s ) t - (ns) rr i = 16a i = 8 .0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j
IRG4BC20UD-S 8 www.irf.com fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4BC20UD-S www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4BC20UD-S 10 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
IRG4BC20UD-S www.irf.com 11 notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 50 w (figure 19) ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/01

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